The research activities within the STROBOS-CODE project take place on three main fields:
Method development: The methodological development of the STROBOS-CODE partners aims on enabling the comprehensive 3D spatio-temporal characterization of various crystalline properties. Here novel correlative approaches will combine e.g. 3D imaging of crystal defects by X-ray diffraction laminography (XDL) with X-ray white beam topography (XWBT), rocking curve imaging (RCI) or visible light microscopy employing (circularly polarized) differential interference contrast (CDIC). In this way it will be possible to link the 3D defect arrangement and its evolution to the present strain fields, to related surface features like steps or indentation damage, and to atomistic properties like the Burgers vector distribution in interaction with external driving forces. Furthermore, the project aimes on extending XDL with in situ capabilities capturing dynamics (e.g. by speeding-up the measurement procedures) and enabling its application for the characterization of higher-Z materials with considerable X-ray absorbtion like gallium arsenide (GaAs) or cadmium telluride (CdTe).
Instrumentation: Within the STROBOS-CODE project, the partners specify, design, construct, install, commission, and exemplarily apply the CODE-station, a dedicated set-up for X-ray diffraction imaging. The instrumentation will be compatible with the framework of the IMAGE beamline and its German-Russian end-station at the synchrotron radiation source at KIT, but its high mobility and flexibility will allow its application for user experiments at any state-of-the-art synchrotron beamlines like at PETRA III or at the ESRF. The STROBOS-CAMERA system will be constructed and will be tested at the synchrotron source Sibir-II, Kurchatov Institute, Moscow.
Exemplary application: The methodology and instrumentation developed and provided by the project partners will be used for correlative 3D and 4D ex and in situ experiments, demonstrating the potential of the novel tools for the investigation of crystalline properties and their evolution under application relevant conditions. Two main fields of application are: A) the collaborators investigate the dislocation generation and evolution in Si wafers under processing relevant conditions with mechanical and thermal loads. B) crystalline defects like cellular dislocation pattern are investigated within higher-Z materials like GaAs and CdTe.